In2te3 ferroelectric
WebOct 6, 2024 · It is revealed that the electronic structures of graphene and In 2 Te 3 monolayer are well preserved upon contact. The transition between the n-type Ohmic and p-type Schottky contacts can be realized for the graphene/In 2 Te 3 heterostructures by switching the polarity of In 2 Te 3. WebHere, the ferroelectric semiconducting nature of alpha-In 2 Se 3 is utilized to design vdWHs based on two-dimensional transition metal dichalcogenides (TMDs)/alpha-In 2 Se 3 , …
In2te3 ferroelectric
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WebOct 6, 2024 · In the In 2 Te 3 monolayer, each unit cell consists of two In atoms and three Te atoms, which are arranged in the sequence of Te–In–Te–In–Te [ 38, 45 ]. The calculated lattice parameters of the In 2 Te 3 monolayer are determined to be a = b = 4.37 Å, which also coincides well with previous findings [ 38 ]. WebNov 10, 2024 · To illustrate the underlying mechanism of the specific alignment of ferroelectric polarizations in leading to distinct frictions of the present systems, we first analyze the energy band structure of 1QL In 2 Se 3 in Figure S7 in the Supporting Information, which exhibits semiconducting characteristic with an energy bandgap of 0.78 …
Webα-In 2 Se 3, a recently reported two-dimensional (2D) van der Waals (vdW) ferroelectric, is gaining significant attention due to its potential applications in nano-scale devices.Here, we have systematically investigated the electronic properties of three configurations of In 2 Se 3 /MoS 2 (I, II, III) heterostructures by first-principles calculations. The results reveal that … WebOct 21, 2024 · Here, hexagonally stacking α-In 2 Se 3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) …
WebJan 1, 2005 · In the present paper, measurements of the electrical conductivity, the Hall coefficient and the dielectric constant in Ga 2 Te 3 was reported. Our main conclusions were: 1. Ga 2 Te 3 crystal is a promising n-type semiconductor. 2. The energy gap for that compound is 1.21 eV, while the activation energy of donors is 0.11 eV. 3. WebSep 9, 2024 · In addition, an abnormal resistive switching phenomenon in α-In 2 Se 3 is reported when operated in the in-plane ferroelectric switching mode. The findings pave …
WebAbstract. van der Waals layered α-In 2 Se 3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an …
WebMar 7, 2024 · The ferromagnetism of CrTe2 is maintained in CrTe2/In2Te3 and its magnetic easy axis can be switched from in-plane to out-of-plane by reversing the FE polarization of … biological database of south australiaWebJul 25, 2024 · The ferroelectric properties of the γ-In 2 Se 3, on the other hand, have not been experimentally proven so far even though it has a non-centrosymmetric crystal … biological cyborgWebDec 8, 2024 · 2D ferroelectrics with robust polar order in the atomic-scale thickness at room temperature are needed to miniaturize ferroelectric devices and tackle challenges imposed by traditional ferroelectrics. These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. Yet, to introduce polar structure into ... biological database and its typesWebFeb 9, 2024 · Indium selenide (In 2 Se 3) is an attractive layered semiconductor material with promising optoelectronic and piezoelectric applications. In this work, single-crystalline α -In 2 Se 3 nanobelts are synthesized using a catalyst-free chemical vapor deposition method through the direct selenization of In 2 O 3 powders. daily mail yesterday\u0027s editionWebDec 12, 2024 · The correlated polymorphism and ferroelectricity in 2D In 2 Se 3 provide vast opportunities in tailoring the FE structures and … daily mail world cup predictorWebDec 21, 2015 · The Bi2Te3/In2Te3 interface is determined as coherent, and the crystallographic orientation between the two phases is determined as «2¯11»In2Te3//«11¯00»Bi2Te3, {111}In2Te3// {0001}Bi2Te3. No... daily mail world cup wallchartWebJun 1, 2024 · Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. However, with the further miniaturization of the electronic devices beyond the Moore’s law, conventional ferroelectrics suffer great challenge arising from the critical thickness effect, where the ferroelectricity is unstable if the film … biological databases and tools